Study of RF performance of surrounding gate MOSFET with gate overlap and underlap
نویسنده
چکیده
In this paper a simulation study is used to investigate the RF performance of surrounding gate (SRG) MOSFET. The effect of nonsymmetrical gate structure caused by nonideality in fabrication process has also been taken care into consideration. The important RF figure-ofmerits such as unity-gain cut-off frequency fT and maximum operating frequency fMAX are studied with the help of a 2D device simulator. Their trends related to the variation of different design parameters such as radius, oxide thickness, gate length, and doping along the downscaling have also been reported.
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